MA6S718

Schottky Barrier Diodes (SBD) MA6S718 Silicon epitaxial planar type Unit : mm For switching circuits Small S-mini type 6-pin package Non connected three elements incorporated in one package, allowing high-density mounting Flat lead type package, resulting in promotion of the actual mounting ratio and solderability with a high-speed mounter Optimum for low-voltage rectification because of its low forward rise voltage (VF) Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.0 ± 0.1 0.65 0.65 2.1 ± 0.1 1.25 ± 0.1 1 2 3 6 5 4 I Features I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Peak forward current* Forward current (DC)* Junction temperature Storage temperature Note) * : Value in per diode Symbol VR VRM IFM IF Tj Tstg Rating 30 30 150 30 125 −55 to +125 Unit V V mA mA °C °C 0.7 ± 0.1 1 : Anode 1 4 : Cathode 3 2 : Anode 2 5 : Cathode 2 3 : Anode 3 6 : Cathode 1 S-Mini Type Package (6-pin) Marking Symbol: M2N Internal Connection 1 2 3 6 5 4 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1 Conditions Min Typ Max 1 0.4 1 Unit µA V V pF ns Detection efficiency 65 0.2 ± 0.05 % Note) 1. Schottky barrier diode is sensitive...