Schottky Barrier Diodes (SBD)
MA6S718
Silicon epitaxial planar type
Unit : mm
For switching circuits
• Small S-mini ty...
Schottky Barrier Diodes (SBD)
MA6S718
Silicon epitaxial planar type
Unit : mm
For switching circuits
Small S-mini type 6-pin package Non connected three elements incorporated in one package, allowing high-density mounting Flat lead type package, resulting in promotion of the actual mounting ratio and solderability with a high-speed mounter Optimum for low-voltage rectification because of its low forward rise voltage (VF) Optimum for high-frequency rectification because of its short reverse recovery time (trr)
2.0 ± 0.1 0.65 0.65
2.1 ± 0.1 1.25 ± 0.1 1 2 3 6 5 4
I Features
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Peak forward current* Forward current (DC)* Junction temperature Storage temperature Note) * : Value in per diode Symbol VR VRM IFM IF Tj Tstg Rating 30 30 150 30 125 −55 to +125 Unit V V mA mA °C °C
0.7 ± 0.1
1 : Anode 1 4 : Cathode 3 2 : Anode 2 5 : Cathode 2 3 : Anode 3 6 : Cathode 1 S-Mini Type Package (6-pin)
Marking Symbol: M2N Internal Connection
1 2 3 6 5 4
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1 Conditions Min Typ Max 1 0.4 1 Unit µA V V pF ns
Detection efficiency
65
0.2 ± 0.05
%
Note) 1.
Schottky barrier diode is sensitive...