MA6S121

Switching Diodes MA6S121 Silicon epitaxial planar type Unit : mm For switching circuit I Features Small S-mini type 6-pin package Three isolated elements contained in one package, allowing highdensity mounting Flat lead type, resulting in improved mounting efficiency and solderability with the high-speed mounting machine Short reverse recovery time trr Small terminal capacitance, Ct 2.0 ± 0.1 0.65 0.65 1 2 3 2.1 ± 0.1 1.25 ± 0.1 6 5 4 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Average forward current*1 Peak forward current*1 Non-repetitive peak forward surge current*1,2 Junction temperature Storage temperature Note) *1 : Value for single diode *2 : t = 1 s Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 −55 to +150 Unit V V mA mA mA °C °C 0.7 ± 0.1 1 : Anode 1 4 : Cathode 3 2 : Anode 2 5 : Cathode 2 3 : Anode 3 6 : Cathode 1 S-Mini Type Package (6-pin) Marking Symbol: M2D Internal Connection 1 2 3 6 5 4 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 80 2 3 Conditions Min Typ Max 0.1 1.2 Unit µA V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 m...