Document
Fast Recovery Diodes (FRD)
MA3D649 (MA6D49)
Silicon planar type (cathode common)
For high-frequency rectification
9.9±0.3
Unit: mm 4.6±0.2
2.9±0.2
3.0±0.5
■ Features
φ 3.2±0.1
15.0±0.5
• Low forward voltage VF
• Fast reverse recovery time trr
• TO-220D (Full-pack package) with high dielectric breakdown voltage
• Easy-to-mount, caused by its V cut lead end
1.4±0.2 1.6±0.2
2.6±0.1
13.7±0.2 4.2±0.2
Solder Dip
0.8±0.1
0.55±0.15
/ ■ Absolute Maximum Ratings Ta = 25°C
e Parameter
Symbol Rating
Unit
c type) Repetitive peak reverse voltage VRRM
200
V
n d ge. ed Non-repetitive peak reverse
VRSM
200
V
sta tinu surge voltage
a e cle con Forward current (Average)
IF(AV)
5
A
lifecy , dis Non-repetitive peak forward
IFSM
30
A
n u t ed surge current *
roduc d typ Junction temperature
te tin ur P tinue Storage temperature
Tj
−40 to +150
°C
Tstg
−40 to +150
°C
g fo con Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
2.54±0.30 5.08±0.50
1: Anode
123
2: Cathode
(Common)
3: Anode
TO-220D-A1 Package
Internal Connection
123
ain onludes foell,opwlianned dis ■ Electrical Characteristics Ta = 25°C ± 3°C
inc typ Parameter
Symbol
Conditions
Min Typ Max Unit
c tinued ance Forward voltage M is con inten Repetitive peak reverse current D ance/Ditsype, ma Reverse recovery time *
ten ce Thermal resistance (j-c) Main tenan Thermal resistance (j-a)
VF IRRM1 IRRM2
trr Rth(j-c) Rth(j-a)
IF = 2.5 A, TC = 25°C VRRM = 200 V, TC = 25°C VRRM = 200 V, Tj = 150°C IF = 1 A, IR = 1 A
0.98
V
20
µA
2
mA
30
ns
3.0 °C/W
63 °C/W
ain Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. d m 2. Absolute frequency of input and output is 10 MHz. (plane 3. *: trr measurement circuit
50 Ω
50 Ω
D.U.T
5.5 Ω
trr IF
IR
0.1 × IR
Publication date: March 2004
Note) The part number in the parenthesis shows conventional part number.
SKJ00002BED
1
MA3D649
Forward current IF (A)
Reverse current IR (µA)
IF VF
10
VF Ta
1.6
IR VR
104
Reverse current IR (µA)
Forward voltage VF (V)
1
Ta = 150°C
−20°C
1.2
100°C
10−1
25°C
IF = 5 A
103
Ta = 150°C
102
100°C
10−2
0.8
2.5 A
10
1A
10−3
25°C 1
0.4
10−4
10−5 0
0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
0 −40 0 40 80 120 160 200
Ambient temperature Ta (°C)
10−1
10−2 0
50 100 150 200 250 300
Reverse voltage VR (V)
Terminal capacitance Ct (pF)
ce/ 104 n d 103 na ue 102 te tin 10
1
in n 10−1 a o −40 M isc 6 D 5
4
3
Am0bienIt4F0t(IeARmVp)8e0raTtuaTr1et2C00V1/T1/t/R6a13==1(6°2111(0C0/00Dp200)VClVaV2n0e0Md aminatiennteann321a0000cn0ec/Deits5yRc0poeevn,et1irmn0sCe0uaetvinod1tlet5ian0ngVcaelnuR2Vcd0eR0efTst=(ayV=f21po5)2eMl05l,o°HCpwz3lia0n0ngefdoudrisPcroond11t0208642iuFn0coutrewlidfaer1tcdyyPpccueDlred(r2Ae,snVdttai)s(gAc3evo.enIrtaFign(4Aeu)Vet0I)dF/ (ttA15yV11D=ptt//)10C321e/(6)A6)
Power dissipation (Average) PD(AV) (W)
2
1
t0 t1
0
20
60
100
140
Case temperature TC (°C)
Forward current (Average) IF(AV) (A)
2
SKJ00002BED
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