MA4X796

Schottky Barrier Diodes (SBD) MA4X796 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features Two MA3X787s in the same direction are contained in one package Allowing to rectify under (IF(AV) = 100 mA) condition Optimum for high-frequency rectification because of its short reverse recovery time (trr) Low VF (forward rise voltage), with high rectification efficiency Reverse voltage VR (DC value) = 50 V guaranteed 2.8 − 0.3 0.65 ± 0.15 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 0.5 R 1.9 ± 0.2 2.9 − 0.05 0.95 4 1 + 0.2 0.95 0.5 + 0.1 3 0.4 − 0.05 2 0.2 1.1 − 0.1 + 0.2 Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Single Double*2 Single Double*2 VR VRRM IFM IF(AV) 50 50 300 200 100 70 V V mA 0.4 ± 0.2 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin) mA Marking Symbol: M4B Internal Connection Non-repetitive peak forward surge current*1 Junction temperature Storage temperature IFSM Tj Tstg 1 125 −55 to +125 A 4 °C °C 3 2 1 Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : Value per chip I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 50 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 25 3 Conditions Min Typ Max 30 0.55 Unit µA ...