MA4X194

Switching Diodes MA4X194 Silicon epitaxial planar type Unit : mm For switching circuits 0.65 ± 0.15 2.8 − 0.3 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 1.1 − 0.1 + 0.2 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Power dissipation Junction temperature Storage temperature Note) * : t = 1 s Single Double Single Double Single Double VR VRRM IF(AV) IF(AV) IFRM IFRM IFSM IFSM PD Tj Tstg 40 40 100 75 225 170 500 375 150 150 −55 to +150 V V mA mA/Unit mA mA/Unit mA mA/Unit mW °C °C 0.4 ± 0.2 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin) Marking Symbol: M1F Internal Connection 4 3 1 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol IR1 IR2 Forward voltage (DC) Terminal capacitance Forward dynamic resistance Reverse recovery time*3 VF Ct r f* 1 r f* 2 trr VR = 40 V VR = 35 V, Ta = 150°C IF = 100 mA VR = 6 V, f = 1 MHz IF = 3 mA, f = 30 MHz IF = 3 mA, f = 30 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 0.98 1.0 1.7 Conditions Min Typ Max 10 10 1.2 2.0 2.5 3.6 100 ns Unit nA µA V pF Ω Note) *1 : rf measuring instrument: Nihon Koshuha Model TDC-121A *2 : rf measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER *3 : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Anal...