MA4X193

Switching Diodes MA4X193 Silicon epitaxial planar type Unit : mm Silicon epitaxial planar type 0.65 ± 0.15 2.8 − 0.3 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 0.5 R 0.2 1.1 − 0.1 + 0.2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR VRRM IF(AV) IFRM IFSM Tj Tstg Rating 80 80 70 150 250 150 −55 to +150 Unit V V mA mA mA °C °C 0.4 ± 0.2 1: Cathode 1 3: Anode 3 Anode 2 Cathode 4 2: Cathode 2, 3 4: Anode 1, 4 Mini Type Package (4-pin) Marking Symbol: M2Z Internal Connection 4 3 0 to 0.1 0.1 to 0.3 0.8 1 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 70 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 80 15 10 Conditions Min Typ Max 100 1.2 Unit nA V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 0.16 − 0.06 + 0.1 0.6 − 0 Mini type 4-pin package, contained four elements Short reverse recovery time trr...