MA4X174

Switching Diodes MA4X174 Silicon planar type Unit : mm For small power rectification and surge absorption 0.65 ± 0.15 2.8 − 0.3 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 0.95 0.2 Repetitive peak reverse voltage Non-repetitive peak forward surge current Output current*1 Repetitive peak forward current*1 Non-repetitive peak forward surge current*1,2 Junction temperature Storage temperature VRRM VRSM IO IFRM IFSM Tj Tstg 250 300 100 225 500 125 −55 to +125 V V mA mA mA °C °C 1.1 0.4 ± 0.2 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin) Marking Symbol: M2Q Internal Connection 4 3 1 2 Note) *1 : Value in single diode used *2 : t = 1 s I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF VR = 200 V IF = 100 mA Conditions Min Typ Max 1.0 1.3 Unit µA V Note) 1. Rated input/output frequency: 3 MHz 0 to 0.1 0.1 to 0.3 0.8 Reverse voltage (DC) VR 200 V 0.16 − 0.06 + 0.2 − 0.1 + 0.1 Parameter Symbol Rating Unit 0.6 − 0 I Absolute Maximum Ratings Ta = 25°C + 0.1 3 0.4 − 0.05 Two isolated elements contained in one package, allowing highdensity mounting High voltage (VR: 200 V) rectification is possible 0.5 R 1.9 ± 0.2 2.9 − 0.05 0.95 4 0.5 1 + 0.2 2 + 0.1 0.4 − 0.05 1.45 + 0.1 I Features 1 MA4X174 IF  V F 1 000 100 Switching Diodes IR  V R Ta = 125°C 1.6 1.4 VF  Ta 100 10 Forward current IF (mA) Forward voltage VF (V) Reverse current IR (nA) 1.2 1.0 0.8...