High Q Hyperabrupt Tuning Varactors
High Q Hyperabrupt Tuning Varactors
Features
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MA4ST550 Series
V3.00
Case Styles
q
High Q Usable Capacitance Cha...
Description
High Q Hyperabrupt Tuning Varactors
Features
q q q
MA4ST550 Series
V3.00
Case Styles
q
High Q Usable Capacitance Change of 7:1 Low Reverse Leakage for Good Post Tuning Drift Characteristics Reproducible C-V Curves
Description
The MA4ST550 family of high Q Silicon Hyperabrupt Tuning Varactors is available in a series of low parasitic capacitance microwave packages or in chip form. The MA4ST550 series of diodes is available with junction capacitances of approximately 0.8 pF to 8.2 pF at -4 volts. These diodes have capacitance change ratios as high as 7:1.
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Applications
The MA4ST550 series is appropriate for use in VCOs with frequencies within the range of approximately 1-14 GHz where a large capacitance change is required. These diodes are suited for VCOs in missile seekers, telecommunication systems and electronic warfare systems with critical post tuning drift specifications.
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Environmental Performance
All tuning varactors in ceramic packages are capable of meeting the performance tests dictated by the methods and procedures of the latest revisions of MIL-S-19500, MILSTD-202 and MIL-STD-750 which specify mechanical, electrical, thermal and other environmental tests common to semiconductor products.
Absolute Maximum Ratings at 25°C
Parameter Reverse Voltage Operating Temperature Storage Temperature Temperature Coefficient Absolute Maximum Same as Breakdown Voltage - 65°C to +150°C - 65°C to +200°C 400 ppm/°C at -4 Volts
Specifications Subject to Change With...
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