DatasheetsPDF.com

MA4P274-1279T Dataheets PDF



Part Number MA4P274-1279T
Manufacturers Tyco
Logo Tyco
Description Surface Mount Plastic PIN Diodes
Datasheet MA4P274-1279T DatasheetMA4P274-1279T Datasheet (PDF)

Quad PIN Diode π Attenuator 5 –3000 MHz MA4P274-1225T Features n n n n n n Package Outline (Topview) 3 2 1 4 PIN Diodes in SOT-25 Plastic Package Externally Selectable Bias and RF Match Network 5 – 3,000 MHz Useable Frequency Band + 43 dBm IP3@ 1 GHz (50 Ω) 1.0 dB Loss @ 1 GHz (50 Ω) 30 dB Attenuation @ 1 GHz (50 Ω) Topview 4 5 Description M/A-COM's MA4P274-1225 is a wideband, lower insertion loss, high IP3, Quad PIN Diode π Attenuator in a low-cost, surface mount SOT-25 package. Four PIN .

  MA4P274-1279T   MA4P274-1279T


Document
Quad PIN Diode π Attenuator 5 –3000 MHz MA4P274-1225T Features n n n n n n Package Outline (Topview) 3 2 1 4 PIN Diodes in SOT-25 Plastic Package Externally Selectable Bias and RF Match Network 5 – 3,000 MHz Useable Frequency Band + 43 dBm IP3@ 1 GHz (50 Ω) 1.0 dB Loss @ 1 GHz (50 Ω) 30 dB Attenuation @ 1 GHz (50 Ω) Topview 4 5 Description M/A-COM's MA4P274-1225 is a wideband, lower insertion loss, high IP3, Quad PIN Diode π Attenuator in a low-cost, surface mount SOT-25 package. Four PIN Diodes in one package reduce design parasitics and improve circuit density. PIN Configuration PIN Function RF In Series Bias RF Out PIN 4 5 Function Shunt 1 Bias Shunt 2 Bias 1 2 3 Applications These PIN Diode Attenuators perform well where RF Signal Amplitude Control is required in 50 Ω Handset Circuits and 75 Ω Broadband CATV Systems. Exceptional Insertion Loss, Attenuation Range, and IP3 at <10 mA bias make these devices suitable for better power level control in RF Amplifiers. Guaranteed Electrical Specifications: @ +25 °C Parameter Ct @ 0 V Rs @ 1 mA Rs @ 10 mA Vb Minority Carrier Lifetime Power Dissipation Test Conditions 100 MHz 100 MHz 100 MHz D.C. ( 50 % - 90 % ) Voltage If = + 10mA, Ir = - 6mA Pulse @ 100 kHz Sq Wave D.C. and F = 5 – 3,000 MHz Derate linearly to 0 mW at 125 C Using 1,000 deg-C/W Thermal Resistance F = 5 – 3,000 MHz Vshunt 1 & 2 Diode Bias = 0.75 V Vseries Diode Bias = 0 to 20 V Units pF Ω Ω V nS 125 Min. Typ. 0.45 13 2.3 150 1000 2000 Max. 0.50 18 3.0 mW 100 RF Incident Power dBm + 20 Quad PIN Diode π Attenuator Functional Schematic PIN 2: Series Bias MA4P274-1225T MA4P274-1225, V 3.00 PIN 3: RF Out PIN 1: RF In PIN 4 : Shunt 1 Bias PIN 5 : Shunt 2 Bias Case Style: SOT 25 Dim Inches Millimeters Absolute Maximum Ratings1 Parameter Operating Temperature Storage Temperature, No Dissipated Power DC Voltage at Temperature Extremes DC Current at 25 °C Mounting Temperature Min. A B C D E F G H J .1103 .1023 0.0355 0.0591 .0138 .0031 .0002 .0138 Max. .1181 .1181 .0512 .0669 .0197 0.0079 .0059 .0216 Min. 2.80 2.6 0.9 1.5 .35 .08 .05 .35 Max. 3.10 3.00 1.30 1.70 .50 0.2 .15 .55 Absolute Maximum -65 °C to +125 °C -65 °C to +150 °C -100 V 75 mA +235 °C for 10 seconds .0374 REF. 0.95 REF. 1. Exceeding any one or combination of these limits may cause permanent damage. 1. 2. Dimensions do not include mold peaks, protrusion or gate burrs which shall not exceed 0.0098 in. (.25) mm per side. Leads Coplanarity should be 0.003 (0.08) mm Max. 2 Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. Quad PIN Diode π Attenuator MA4P274-1225T MA4P274-1225, V 3.00 Typical 50 Ω SOT-25 RF Performance @ +25 °C using Wideand RF Circuit Design ( Values Shown include Through Loss Calibrated Out of RF Test Circuit ) Parameter Insertion Loss Frequency Range 5 – 1,000 MHz Test Conditions + 3 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F = 1 GHz + 6.5 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F = 1 GHz + 6.5 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F = 1 GHz 0 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F = 1 GHz 0 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F1 = 1000 MHz, F2 = 1100 MHz + 6.5 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F1 = 1000 MHz, F2 = 1100 MHz 0 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F1 = 100 MHz, F2 = 110 MHz + 6.5 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F1 = 100 MHz, F2 = 110 MHz Within 1 dB of Final Attenuation Value F = 1 GHz 0 – 20 V Series Diode Bias and 0.75 V Shunt 1 and 2 Bias Units dB Min. Typ. -2.0 Max. Insertion Loss 5 – 1,000 MHz dB -1.0 Return Loss 5 – 1,000 MHz dB -10 Attenuation 5 – 1,000 MHz dB -29 Input IP3 5 – 1,000 MHz dBm 43 Input IP3 5 – 1,000 MHz dBm 43 Input IP3 5 – 1,000 MHz dBm 43 Input IP3 5 – 1,000 MHz dBm 33 Settling Time RF C.W. Incident Power 5 – 1,000 MHz 5 – 1,000 MHz uS dBm 3 + 20 Typical 75 Ω SOT-25 RF Performance @ +25 °C using Wideand RF Circuit Design ( Values Shown include Through Loss Calibrated Out of RF Test Circuit ) Parameter Insertion Loss Frequency Range 5 – 1,000 MHz Test Conditions + 2 mA / Series Diode and 1.0 V Shunt 1 and 2 Bias F = 1 GHz + 4.5 mA / Series Diode and 1.0 V Shunt 1 and 2 Bias F = 1 GHz 0 mA / Series Diode and 1 V Shunt 1 and 2 Bias F = 1 GHz + 4.5 mA / Series Diode and 1.0 V Shunt 1 and 2 Bias F = 1 GHz Units dB Min. Typ. -1.1 Max. Insertion Loss 5 – 1,000 MHz dB -0.6 Attenuation 5 – 1,000 MHz dB -27 Return Loss 5 – 1,000 MHz dB -10 Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 3 Qu.


MA4P274-1225T MA4P274-1279T MA4P274-287T


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)