MA3Z080E

Band Switching Diodes MA3Z080D, MA3Z080E Silicon epitaxial planar type Unit : mm For band switching 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0.1 Low forward dynamic resistance rf Less voltage dependence of diode capacitance CD S-mini type package containing two elements, allowing downsizing of equipment and automatic insertion through the taping package 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature* Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +150 Unit V mA °C °C 0.9 ± 0.1 1 : Cathode 1 2 : Cathode 2 3 : Anode 1, 2 EIAJ : SC-70 Flat S-Mini Type Package (3-pin) Storage temperature Note) * : Maximum ambient temperature during operation Marking Symbol MA3Z080D : M1X MA3Z080E : M1Y Internal Connection 1 3 2 D 1 3 2 E I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Conditions Min Typ 0.01 0.92 0.9 0.65 Max 100 1.0 1.2 0.85 Unit nA V pF Ω Note) 1 Each characteristic is a standard for individual diodes 2 Rated input/output frequency: 100 MHz 3 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.15 − 0.05 + 0.1 0.3 − 0 I Features 1 MA3Z080D, MA3Z080E IF  V F 1 000 Ta = 25°C 10 Band Switching Diodes CD  VR f = 1 MHz Ta = 25°C IR  T a 100 VR = 33 V 5 3...