Schottky Barrier Diodes (SBD)
MA3X788
Silicon epitaxial planar type
For super-high speed switching circuit For small cu...
Schottky Barrier Diodes (SBD)
MA3X788
Silicon epitaxial planar type
For super-high speed switching circuit For small current rectification I Features
Allowing to rectify under (IF(AV) = 200 mA) condition Reverse voltage VR (DC value) = 60 V guaranteed
2.9 − 0.05
+ 0.2
2.8 − 0.3 0.65 ± 0.15 1.5
+ 0.2
Unit : mm
0.65 ± 0.15
+ 0.25 − 0.05
0.95
1.9 ± 0.2
1 3 2
0.95
1.45 0 to 0.1
Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature
VR VRRM IFM IF(AV) IFSM Tj Tstg
60 60 300 200 1 125 −55 to +125
V V mA mA A °C °C
0.1 to 0.3 0.4 ± 0.2
0.8
Parameter
Symbol
Rating
Unit
1.1 − 0.1
1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin)
Marking Symbol: M3V Internal Connection
1 3 2
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 50 V IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 30 3 Conditions Min Typ Max 50 0.65 Unit µA V pF ns
Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 1 000 MHz 3. * : trr measu...