MA3X717E

Schottky Barrier Diodes (SBD) MA3X717D, MA3X717E Silicon epitaxial planar type For switching circuits I Features Two MA3X717s are contained in one package Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704D/E) Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.25 − 0.05 + 0.2 Unit : mm 0.65 ± 0.15 0.95 1.9 ± 0.2 2.9 − 0.05 1 3 2 + 0.2 0.95 1.45 1.1 − 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double* Single Double* Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C 1 mA Unit V V mA JEDEC : TO-236 EIAJ : SC-59 Mini Type Package (3-pin) MA3X717D MA3X717E 1 Cathode Anode 2 Cathode Anode 3 Anode Cathode Marking Symbol MA3X717D : M3E MA3X717E : M3D Internal Connection 1 3 2 Junction temperature Storage temperature Note) * : Value per chip 0 to 0.1 0.1 to 0.3 0.4 ± 0.2 0.8 0.16 − 0.06 + 0.2 + 0.1 0.4 − 0.05 + 0.1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF Conditions D Min Typ E Max 30 0.3 1 1.5 1 Unit µA V V pF ns Detection efficiency 65...