MA3X717

Schottky Barrier Diodes (SBD) MA3X717 (MA717) Silicon epitaxial planar type Unit: mm For switching For wave detection s Features Low forward voltage VF, optimum for low voltage rectification Low VF type of MA3X704A (MA704A) Optimum for high frequency rectification because of its short reverse recovery time (trr) Mini type 3-pin package 1 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚ 1.1+0.2 –0.1 (0.65) s Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak forward current Forward current (DC) Junction temperature Storage temperature Symbol VR IFM IF Tj Tstg Rating 30 150 30 125 −55 to +125 Unit V mA mA °C °C 0 to 0.1 1.1+0.3 –0.1 1: Anode 2: N.C. 3: Cathode EIAJ: SC-59 Mini3-G1 Package Marking Symbol: M2M Internal Connection 3 s Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency * 1 2 Conditions VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF Min Typ Max 30 0.3 1.0 Unit µA V Ct trr η 1.5 1.0 65 pF ns % Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 GHz 3. *: trr measuring i...