MA3X704A

Schottky Barrier Diodes (SBD) MA3X704, MA3X704A Silicon epitaxial planar type For switching circuits For wave detection circuit 2.9 − 0.05 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 0.95 I Features Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) Small temperature coefficient of forward characteristic Extremely low reverse current IR 1.9 ± 0.2 + 0.2 1 3 2 1.45 0 to 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage MA3X704 MA3X704A MA3X704 MA3X704A IFM IF Tj Tstg VRM Symbol VR Rating 15 30 15 30 150 30 125 −55 to +125 mA mA °C °C V Unit V 0.1 to 0.3 0.4 ± 0.2 1.1 0.8 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Peak forward current Forward current (DC) Junction temperature Storage temperature Marking Symbol MA3X704 : M1K MA3X704A : M1L Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) MA3X704 MA3X704A Forward voltage (DC) VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η Symbol IR VR = 15 V VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1 Conditions Min Typ Max 200 300 0.4 1 V V pF ns Unit nA Detection efficiency 65 0.16 − 0.06 + 0.2 − 0.1 + 0.1 0.4 − 0.05 + 0.1 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, et...