DatasheetsPDF.com

MA3X703 Dataheets PDF



Part Number MA3X703
Manufacturers Panasonic
Logo Panasonic
Description Silicon epitaxial planar type
Datasheet MA3X703 DatasheetMA3X703 Datasheet (PDF)

Schottky Barrier Diodes (SBD) MA3X703 Silicon epitaxial planar type For high-frequency rectification I Features • Mini type 3-pin package •Allowing to rectify under (IF(AV) = 500 mA) condition • Low IR(reverse current) type. (About 1/10 of IR of the ordinary products) 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 1.9 ± 0.2 2.9 − 0.05 1 3 2 + 0.2 0.95 1.45 0 to 0.1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repe.

  MA3X703   MA3X703


Document
Schottky Barrier Diodes (SBD) MA3X703 Silicon epitaxial planar type For high-frequency rectification I Features • Mini type 3-pin package •Allowing to rectify under (IF(AV) = 500 mA) condition • Low IR(reverse current) type. (About 1/10 of IR of the ordinary products) 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 1.9 ± 0.2 2.9 − 0.05 1 3 2 + 0.2 0.95 1.45 0 to 0.1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 20 500 3 125 −55 to +125 Unit V V mA A °C °C 0.1 to 0.3 0.4 ± 0.2 0.8 I Absolute Maximum Ratings Ta = 25°C 1.1 − 0.1 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M4R Internal Connection 1 3 2 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol IR1 IR2 Forward voltage (DC) VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 10 V VR = 5 V IF = 500 mA IF = 10 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω 0.5 0.3 60 5 Conditions Min Typ Max 10 1 0.55 0.4 Unit µA µA V V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 400 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1·IR IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 0.16 − 0.06 + 0.2 + 0.1 0.4 − 0.05 + 0.1 1 MA3X703 IF  V F 1 Schottky Barrier Diodes (SBD) VF  Ta 0.8 0.7 104 IR  VR 10−1 Ta = 125°C Forward voltage VF (V) Forward current IF (A) 0.6 0.5 0.4 0.3 0.2 0.1 50 mA 5 mA 10−2 − 20°C Reverse current IR (µA) 75°C 25°C 103 Ta = 125°C IF = 500 mA 102 75°C 10 10−3 10−4 1 25°C 10−5 0 0.1 0.2 0.3 0.4 0.5 0.6 0 −40 10−1 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (°C) Reverse voltage VR (V) IR  T a 10 000 Ct  VR 80 Ta = 25°C 70 1 000 IF(surge)  tW Ta = 25°C 300 tW 100 30 10 3 1 0.3 0.1 0.1 Breakdown point (typ.) IF(surge) 1 000 Reverse current IR (µA) VR = 20 V 10 V 6V 3V 60 50 40 30 20 10 100 10 1 0.1 −40 0 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) 0.3 1 3 10 30 100 Ambient temperature Ta (°C) Reverse voltage VR (V) Pulse width tW (ms) 2 .


MA3X701 MA3X703 MA3X704


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)