Document
Schottky Barrier Diodes (SBD)
MA3X703
Silicon epitaxial planar type
For high-frequency rectification I Features
• Mini type 3-pin package •Allowing to rectify under (IF(AV) = 500 mA) condition • Low IR(reverse current) type. (About 1/10 of IR of the ordinary products)
2.8 − 0.3 0.65 ± 0.15 1.5
+ 0.2
Unit : mm
0.65 ± 0.15
+ 0.25 − 0.05
0.95
1.9 ± 0.2
2.9 − 0.05
1 3 2
+ 0.2
0.95
1.45 0 to 0.1
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature
Symbol VR VRRM IF(AV) IFSM Tj Tstg
Rating 20 20 500 3 125 −55 to +125
Unit V V mA A °C °C
0.1 to 0.3 0.4 ± 0.2
0.8
I Absolute Maximum Ratings Ta = 25°C
1.1 − 0.1
1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin)
Marking Symbol: M4R Internal Connection
1 3 2
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Symbol IR1 IR2 Forward voltage (DC) VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 10 V VR = 5 V IF = 500 mA IF = 10 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω 0.5 0.3 60 5 Conditions Min Typ Max 10 1 0.55 0.4 Unit µA µA V V pF ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 400 MHz 3. * : trr measuring circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1·IR IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
0.16 − 0.06
+ 0.2
+ 0.1
0.4 − 0.05
+ 0.1
1
MA3X703
IF V F
1
Schottky Barrier Diodes (SBD)
VF Ta
0.8 0.7
104
IR VR
10−1
Ta = 125°C
Forward voltage VF (V)
Forward current IF (A)
0.6 0.5 0.4 0.3 0.2 0.1 50 mA 5 mA
10−2
− 20°C
Reverse current IR (µA)
75°C 25°C
103
Ta = 125°C
IF = 500 mA
102 75°C 10
10−3
10−4
1
25°C
10−5
0
0.1
0.2
0.3
0.4
0.5
0.6
0 −40
10−1
0
40
80
120
160
200
0
5
10
15
20
25
30
Forward voltage VF (V)
Ambient temperature Ta (°C)
Reverse voltage VR (V)
IR T a
10 000
Ct VR
80 Ta = 25°C 70 1 000
IF(surge) tW
Ta = 25°C 300 tW 100 30 10 3 1 0.3 0.1 0.1 Breakdown point (typ.) IF(surge)
1 000
Reverse current IR (µA)
VR = 20 V 10 V 6V 3V
60 50 40 30 20 10
100
10
1
0.1 −40
0
0 40 80 120 160 200
0
5
10
15
20
25
30
Forward surge current IF(surge) (A)
Terminal capacitance Ct (pF)
0.3
1
3
10
30
100
Ambient temperature Ta (°C)
Reverse voltage VR (V)
Pulse width tW (ms)
2
.