MA3X200F

Switching Diodes MA3X200F Silicon epitaxial planar type 2.8 − 0.3 + 0.2 Unit : mm 0.65 ± 0.15 For switching circuits I Features Two elements contained in one package, allowing high-density mounting Soft recovery characteristic (Trr: 100 ns) Small terminal capacitance, Ct 0.65 ± 0.15 1.5 − 0.05 + 0.25 0.95 1.9 ± 0.2 2.9 − 0.05 1 3 2 + 0.2 0.95 1.45 + 0.2 − 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward voltage (DC) Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Series Single Series Single Series Tj Tstg IFSM IFM Symbol VR VRM IF Rating 80 80 100 75 225 170 500 325 150 −55 to +150 °C °C mA mA Unit V V mA 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2 Mini Type Package (3-pin) Marking Symbol: M5M Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol IR1 IR2 Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* VF VR Ct trr VR = 75 V VR = 5 V, Ta = 85°C IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 80 2.5 100 Conditions Min Typ Max 10 20 1.2 Unit nA nA V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 ...