MA3X157A

Switching Diodes MA3X157A Silicon epitaxial planar type Unit : mm For switching circuits 0.65 ± 0.15 2.8 − 0.3 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 0.95 High switching speed Small terminal capacitance, Ct Both chips have even characteristics Can be connected in series 1.9 ± 0.2 2.9 − 0.05 + 0.2 I Features 1 3 2 0.95 1.45 0 to 0.1 1.1 − 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Series Single Series Single Series Tj Tstg IFSM IFRM Symbol VR VRM IF Rating 80 80 100 65 225 145 500 325 150 −55 to +150 °C °C mA mA Unit V V mA 0.1 to 0.3 0.4 ± 0.2 1 : Anode 1 2 : Cathode 2 3 : Anode 2 JEDEC : TO-236 Cathode 1 EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: MS Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 80 2 3 Conditions Min Typ Max 0.1 1.2 Unit µA V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) ...