MA3V177

Switching Diodes MA3V177 Silicon epitaxial planar type For switching circuits I Features Small terminal capacitance, Ct Can be connected in series 4.0 ± 0.2 3.0 ± 0.2 Unit : mm I Absolute Maximum Ratings Ta = 25°C 0.45 − 0.1 + 0.2 Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature Symbol VR VRM IF IFM Tj Tstg Rating 40 40 100 200 150 −55 to +150 Unit V V mA mA °C °C 1 2 3 1.27 1.27 2.54 ± 0.15 1 : Anode 2 : Cathode Anode 3 : Cathode New S-Type Package Internal Connection 1 2 3 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Symbol IR VF VR Ct1*1 Ct2*2 Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Between pins 3 and 2 *2 : Between pins 2 and 1 VR = 40 V IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz 40 5.5 3.0 Conditions Min Typ Max 0.1 1.2 Unit µA V V pF 2.0 ± 0.2 marking 0.7 ± 0.1 15.6 ± 0.5 1 MA3V177 IF  V F 103 Ta = 25°C 103 Switching Diodes IF  V F Ta = 25°C IR  V R 102 Ta = 25°C Forward current IF (mA) Forward current IF (mA) 10 1 2 3 10 1 2 3 Reverse current IR (µA) 102 102 10 1 1 2 3 10−1 D1 (3-2) 1 1 10−1 0 0.4 0.8 1.2 1.6 2.0 10−1 0 0.4 0.8 1.2 1.6 2.0 10−2 D2 (2-1) 0 10 20 30 40 50 Forward voltage VF (V) Forward voltage VF (V) Reverse voltage VR (V) IR  VR 103 Ta = 125°C VF  Ta 1.2 1.2 VF  Ta 1.0 1.0 Reverse current IR (µA...