MA3V175D

Switching Diodes MA3V175D, MA3V176D Silicon epitaxial planar type Unit : mm For switching circuits I Features Short reverse recovery time trr Small terminal capacitance, Ct 4.0 ± 0.2 3.0 ± 0.2 I Absolute Maximum Ratings Ta = 25°C Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current MA3V175D MA3V176D MA3V175D MA3V176D Single Double Single Double IFSM Tj Tstg IFM IF VRM VR 40 80 40 80 100 150 225 340 500 750 150 −55 to +150 °C °C mA mA mA V 1.27 1.27 2.54 ± 0.15 V 1 2 3 1 : Cathode 2 : Anode 3 : Cathode New S-Type Package Internal Connection Non-repetitive peak Single forward surge current* Double Junction temperature Storage temperature Note) * : t = 1 s 1 2 3 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) MA3V175D MA3V176D Forward voltage (DC) Reverse voltage (DC) MA3V175D MA3V176D Terminal capacitance Reverse recovery time* Ct trr VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω VF VR Symbol IR VR = 35 V VR = 75 V IF = 100 mA IR = 100 µA 40 80 4 10 pF ns Conditions Min Typ Max 0.1 0.1 1.2 V V Unit µA Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit DUT Input Pulse tr Sampling Oscilloscope Ri = 50 Ω tP 10% 90% tp = 100 ns tr = 0.6 ns δ = 0.05 0 IF Output Pulse trr t Irr = 0.1·IR IF = 10 mA VR = 6 V RL = 100 Ω IF Rs = 50 Ω V = VR + IR·RS 2.0 ± 0.2 marking 0.45 − 0.1 + 0.2 Parameter Symbol Rating Unit 0.7 ± 0.1 15.6 ± 0.5 1 MA3V175D, MA3V176D I...