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MA3U649 Dataheets PDF



Part Number MA3U649
Manufacturers Panasonic
Logo Panasonic
Description Silicon planar type (cathode common)
Datasheet MA3U649 DatasheetMA3U649 Datasheet (PDF)

Fast Recovery Diodes (FRD) MA3U649 Silicon planar type (cathode common) Unit : mm For high-frequency rectification I Features • Small U-type package for surface mounting • Low-loss type with fast reverse recovery time trr • Cathode common dual type 6.5 ± 0.1 5.3 ± 0.1 4.35 ± 0.1 2.3 ± 0.1 0.5 ± 0.1 7.3 ± 0.1 1.8 ± 0.1 2.5 ± 0.1 0.8 max. 0.93 ± 0.1 1.0 ± 0.1 0.1 ± 0.05 0.5 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Repetitive peak reverse voltage Non-repetitive peak reverse s.

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Fast Recovery Diodes (FRD) MA3U649 Silicon planar type (cathode common) Unit : mm For high-frequency rectification I Features • Small U-type package for surface mounting • Low-loss type with fast reverse recovery time trr • Cathode common dual type 6.5 ± 0.1 5.3 ± 0.1 4.35 ± 0.1 2.3 ± 0.1 0.5 ± 0.1 7.3 ± 0.1 1.8 ± 0.1 2.5 ± 0.1 0.8 max. 0.93 ± 0.1 1.0 ± 0.1 0.1 ± 0.05 0.5 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage Average forward current*1 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature Symbol VRRM VRSM IF(AV) IFSM Tj Tstg Rating 200 200 5 40 −40 to +150 −40 to +150 Unit V V A A °C °C 1 0.75 ± 0.1 2.3 ± 0.1 4.6 ± 0.1 2 3 1 : Anode 2 : Cathode (Common) 3 : Anode U-Type Package Note) 1. *1 : TC = 25°C *2 : Half sine-wave; 10 ms/cycle I Electrical Characteristics Ta = 25°C Parameter Repetitive peak reverse current Symbol IRRM1 IRRM2 Forward voltage (DC) Reverse recovery time*2 Thermal resistance*1 VF trr Rth(j-c) Conditions VRRM = 200 V, TC = 25°C VRRM = 200 V, Tj = 150°C IF = 2.5 A, TC = 25°C IF = 1 A, IR = 1 A Direct current (between junction and case) Min Typ Max 20 2 0.98 30 12.5 Unit µA mA V ns °C/W Note) 1. Rated input/output frequency: 200 MHz 2. *1 : TC = 25°C *2 : trr measuring circuit 50 Ω 50 Ω trr IF D.U.T 5.5 Ω IR 0.1 × IR 1.0 ± 0.2 1 MA3U649 IF  V F 10 1.6 1.4 Fast Recovery Diodes (FRD) VF  Ta IR  VR 104 Ta = 150°C 1 Ta = 150°C –20°C 103 Forward voltage VF (V) Forward current IF (A) 10−1 100°C 25°C 1.2 1.0 0.8 0.6 0.4 0.2 IF = 5 A Reverse current IR (µA) 102 100°C 10−2 10 25°C 2.5 A 1A 10−3 1 10−4 10−1 10−5 0 0.2 0.4 0.6 0.8 1.0 1.2 0 −40 10−2 0 40 80 120 160 200 0 50 100 150 200 250 300 Forward voltage VF (V) Ambient temperature Ta (°C) Reverse voltage VR (V) IR  T a 10 000 VR = 200 V 100 V 10 V 30 Ct  VR f = 1 MHz Ta = 25°C 1 000 Terminal capacitance Ct (pF) Reverse current IR (µA) 20 100 10 10 1 0.1 −40 0 0 40 80 120 160 200 0 50 100 150 200 250 300 Ambient temperature Ta (°C) Reverse voltage VR (V) 2 .


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