Schottky Barrier Diodes (SBD)
MA3S795E
Silicon epitaxial planar type
Unit : mm
0.28 ± 0.05
For switching circuits
1.60...
Schottky Barrier Diodes (SBD)
MA3S795E
Silicon epitaxial planar type
Unit : mm
0.28 ± 0.05
For switching circuits
1.60 − 0.03 0.80 0.80 0.51 0.51
0.80
1.60 ± 0.1 0.80 ± 0.05
Extra-small (SS-mini type) package, allowing high-density mounting Optimum for low voltage rectification because of its low VF (VF = 0.3 V or less at IF = 1 mA) Optimum for high-frequency rectification because of its short reverse recovery time (trr)
+ 0.05
I Features
1
3
2
0.28 ± 0.05
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) For switching circuits Peak forward current Forward current (DC) Single Double* Single Double* Tj Tstg IF Symbol VR VRM IFM Rating 30 30 150 110 30 20 125 −55 to +125 °C °C mA Unit V V mA
0.60 − 0.03
0.44
0.44
+ 0.05
1 : Anode 1 2 : Anode 2 3 : Carhode 1 Cathode 2 SS-Mini Type Package (3-pin)
0.88 − 0.03
Marking Symbol: M3D Internal Connection
1 3 2
Junction temperature Storage temperature Note) * : Value per chip
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1 Conditions Min Typ Max 30 0.3 1 Unit µA V V pF ns
Detection efficiency
65
0.12 − 0.02
+ 0.05
+ 0.05
0.28 ± 0.05
%
Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due at...