MA3S795E

Schottky Barrier Diodes (SBD) MA3S795E Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 For switching circuits 1.60 − 0.03 0.80 0.80 0.51 0.51 0.80 1.60 ± 0.1 0.80 ± 0.05 Extra-small (SS-mini type) package, allowing high-density mounting Optimum for low voltage rectification because of its low VF (VF = 0.3 V or less at IF = 1 mA) Optimum for high-frequency rectification because of its short reverse recovery time (trr) + 0.05 I Features 1 3 2 0.28 ± 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) For switching circuits Peak forward current Forward current (DC) Single Double* Single Double* Tj Tstg IF Symbol VR VRM IFM Rating 30 30 150 110 30 20 125 −55 to +125 °C °C mA Unit V V mA 0.60 − 0.03 0.44 0.44 + 0.05 1 : Anode 1 2 : Anode 2 3 : Carhode 1 Cathode 2 SS-Mini Type Package (3-pin) 0.88 − 0.03 Marking Symbol: M3D Internal Connection 1 3 2 Junction temperature Storage temperature Note) * : Value per chip I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1 Conditions Min Typ Max 30 0.3 1 Unit µA V V pF ns Detection efficiency 65 0.12 − 0.02 + 0.05 + 0.05 0.28 ± 0.05 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due at...