MA3S795

Schottky Barrier Diodes (SBD) MA3S795 Silicon epitaxial planar type 0.28 ± 0.05 For switching circuits I Features Extra-small SS-mini type 3-pin package, allowing high-density mounting Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) Optimum for high-frequency rectification because of its short reverse recovery time (trr) 1.60 − 0.03 0.80 0.80 0.51 0.51 0.80 1.60 ± 0.1 0.80 ± 0.05 Unit : mm 1 + 0.05 3 2 0.28 ± 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) For switching circuits Forward current (DC) Peak forward current Junction temperature Storage temperature Symbol VR VRM IF IFM Tj Tstg Rating 30 30 30 150 125 −55 to +125 Unit V V mA mA °C °C 0.60 − 0.03 0.44 0.44 + 0.05 0.88 − 0.03 1 : Anode 2 : NC 3 : Cathode SS-Mini Type Package(3-pin) Marking Symbol: M2M Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1 Conditions Min Typ Max 30 0.3 1 Unit µA V V pF ns Detection efficiency 65 0.12 − 0.02 + 0.05 + 0.05 0.28 ± 0.05 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakag...