MA3S781E

Schottky Barrier Diodes (SBD) MA3S781E Silicon epitaxial planar type (cathode common) Unit : mm 0.28 ± 0.05 For high-speed switching circuits I Features SS-mini type 3-pin package Allowing high-density mounting Cathode common type 1.60 ± 0.1 0.80 0.80 ± 0.05 1.60 − 0.03 0.80 0.80 0.51 0.51 1 + 0.05 3 2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Single Double Single Double Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA 0.60 − 0.03 + 0.05 0.28 ± 0.05 0.44 0.44 + 0.05 1 : Anode 1 2 : Anode 2 3 : Cathode SS-Mini Type Package (3-pin) 0.88 − 0.03 Marking Symbol: M2R Internal Connection 1 3 2 Junction temperature Storage temperature I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1.0 Conditions Min Typ Max 1.0 0.4 1.0 Unit µA V V pF ns Detection efficiency 65 0.12 − 0.02 + 0.05 0.28 ± 0.05 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring cir...