MA3S781D

Schottky Barrier Diodes (SBD) MA3S781D Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 For high-speed switching circuits 1.60 − 0.03 0.80 0.80 0.51 0.51 0.80 1.60 ± 0.1 0.80 ± 0.05 I Features SS-mini type 3-pin package Allowing high-density mounting Anode common type 1 + 0.05 3 2 I Absolute Maximum Ratings Ta = 25°C Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double Single Double Tj Tstg IFM VR VRM IF 30 30 30 20 150 110 125 −55 to +125 °C °C mA V V mA 0.60 − 0.03 + 0.05 0.44 0.44 + 0.05 0.88 − 0.03 1 : Cathode 1 3 : Anode 1 2 : Cathode 2 Anode 2 SS-Mini Type Package (3-pin) Marking Symbol: M2P Internal Connection 1 3 2 Junction temperature Storage temperature I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Detection efficiency Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1.0 65 Conditions Min Typ Max 1.0 0.4 1.0 Unit µA V V pF ns % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tr 10% tp t IF trr t Irr = 1 mA IF = 10 m...