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MA3J741D Dataheets PDF



Part Number MA3J741D
Manufacturers Panasonic
Logo Panasonic
Description Silicon epitaxial planar type
Datasheet MA3J741D DatasheetMA3J741D Datasheet (PDF)

Schottky Barrier Diodes (SBD) MA3J741D, MA3J741E Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double* Single Double* Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA 0.9 ± 0.1 EIAJ : SC-70 Flat S-Mini Type Package (3-pin) M.

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Schottky Barrier Diodes (SBD) MA3J741D, MA3J741E Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double* Single Double* Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA 0.9 ± 0.1 EIAJ : SC-70 Flat S-Mini Type Package (3-pin) MA3J741D MA3J741E 1 Cathode 1 Anode 1 2 Cathode 2 Anode 2 3 Anode 1,2 Cathode 1,2 Junction temperature Storage temperature Note) * : Value per hcip Marking Symbol • MA3J741D : M2P • MA3J741E : M2R Internal Connection 1 3 2 2 1 3 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF Conditions D Min Typ Max 1 0.4 1 0.15 − 0.05 • Two MA3J741s are contained in one package (S-mini type 3-pin) • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current IR 1 3 2 + 0.1 0.3 − 0 I Features E Unit µA V V pF ns 1.5 1 Detection efficiency 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse Output Pulse tr 10% tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 1 MA3J741D, MA3J741E IF  V F 103 1.0 Schottky Barrier Diodes (SBD) VF  Ta 103 IR  VR 102 75°C 25°C Ta = 125°C – 20°C Forward current IF (mA) 0.8 102 IF = 30 mA Ta = 125°C Forward voltage VF (V) Reverse current IR (µA) 10 0.6 10 mA 0.4 10 75°C 1 1 25°C 10−1 10−1 0.2 1 mA 10−2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 −40 10−2 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (°C) Reverse voltage VR (V) Ct  VR 3 f = 1 MHz Ta = 25°C 103 IR  T a Terminal capacitance Ct (pF) 102 2 Reverse current IR (µA) VR = 30 V 3V 1V 10 1 1 10−1 0 0 5 10 15 20 25 30 10−2 −40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (°C) 2 .


MA3J741 MA3J741D MA3J741E


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