Document
Schottky Barrier Diodes (SBD)
MA3J741D, MA3J741E
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.425
2.1 ± 0.1 1.25 ± 0.1 0.425
+ 0.1
2.0 ± 0.2 1.3 ± 0.1 0.65 0.65
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double* Single Double* Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA
0.9 ± 0.1
EIAJ : SC-70 Flat S-Mini Type Package (3-pin)
MA3J741D MA3J741E 1 Cathode 1 Anode 1 2 Cathode 2 Anode 2 3 Anode 1,2 Cathode 1,2
Junction temperature Storage temperature Note) * : Value per hcip
Marking Symbol • MA3J741D : M2P • MA3J741E : M2R Internal Connection
1 3 2
2 1 3
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF Conditions
D Min Typ
Max 1 0.4 1
0.15 − 0.05
• Two MA3J741s are contained in one package (S-mini type 3-pin) • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current IR
1 3 2
+ 0.1
0.3 − 0
I Features
E Unit µA V V pF ns
1.5 1
Detection efficiency
65
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse Output Pulse
tr 10% tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω
A
VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
1
MA3J741D, MA3J741E
IF V F
103
1.0
Schottky Barrier Diodes (SBD)
VF Ta
103
IR VR
102
75°C 25°C Ta = 125°C – 20°C
Forward current IF (mA)
0.8
102
IF = 30 mA
Ta = 125°C
Forward voltage VF (V)
Reverse current IR (µA)
10
0.6 10 mA 0.4
10
75°C
1
1 25°C 10−1
10−1
0.2 1 mA
10−2
0
0.2
0.4
0.6
0.8
1.0
1.2
0 −40
10−2
0 40 80 120 160 200
0
5
10
15
20
25
30
Forward voltage VF (V)
Ambient temperature Ta (°C)
Reverse voltage VR (V)
Ct VR
3 f = 1 MHz Ta = 25°C
103
IR T a
Terminal capacitance Ct (pF)
102
2
Reverse current IR (µA)
VR = 30 V 3V 1V
10
1
1
10−1
0
0
5
10
15
20
25
30
10−2 −40
0
40
80
120
160
200
Reverse voltage VR (V)
Ambient temperature Ta (°C)
2
.