MA3J147

Switching Diodes MA3J147 Silicon epitaxial planar type Unit : mm For high-speed switching circuits 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 I Features Small S-mini type package contained two elements, allowing highdensity mounting Two diodes are connected in series in the package 1 3 2 Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Series Single Series Single Series Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 65 225 145 500 325 150 −55 to +150 Unit V V mA 0.9 ± 0.1 I Absolute Maximum Ratings Ta = 25°C mA 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2 Flat S-Mini Type Package (3-pin) Marking Symbol: MS mA Internal Connection °C °C 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 80 2 3 Conditions Min Typ Max 100 1.2 Unit nA V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0...