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MA3G655 Dataheets PDF



Part Number MA3G655
Manufacturers Panasonic
Logo Panasonic
Description Silicon planar type (cathode common)
Datasheet MA3G655 DatasheetMA3G655 Datasheet (PDF)

Fast Recovery Diodes (FRD) MA3G655 Silicon planar type (cathode common) Unit : mm 0.7 For switching circuits I Features • High reverse voltage VR • Low forward voltage VF • Fast reverse recovery time trr 15.0 ± 0.3 11.0 ± 0.2 5.0 ± 0.2 3.2 21.0 ± 0.5 15.0 ± 0.2 φ 3.2 ± 0.1 16.2 ± 0.5 12.5 3.5 Solder Dip 2.0 ± 0.2 2.0 ± 0.1 0.6 ± 0.2 I Absolute Maximum Ratings Ta = 25°C Parameter Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage Average forward current Non-repeti.

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Fast Recovery Diodes (FRD) MA3G655 Silicon planar type (cathode common) Unit : mm 0.7 For switching circuits I Features • High reverse voltage VR • Low forward voltage VF • Fast reverse recovery time trr 15.0 ± 0.3 11.0 ± 0.2 5.0 ± 0.2 3.2 21.0 ± 0.5 15.0 ± 0.2 φ 3.2 ± 0.1 16.2 ± 0.5 12.5 3.5 Solder Dip 2.0 ± 0.2 2.0 ± 0.1 0.6 ± 0.2 I Absolute Maximum Ratings Ta = 25°C Parameter Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM VRSM IF(AV) IFSM Tj Tstg Rating 300 300 20 150 −40 to +150 −40 to +150 Unit V V A A °C °C 1.1 ± 0.1 5.45 ± 0.3 10.9 ± 0.5 1 2 3 1 : Anode 2 : Cathode (Common) 3 : Anode TOP-3F(a) (TOP-3 Full Pack Package) Internal Connection Note) * : Half sine-wave; 10 ms/cycle 1 2 3 I Electrical Characteristics Ta = 25°C Parameter Repetitive peak reverse current Symbol IRRM1 IRRM2 Forward voltage (DC) Reverse recovery time* Thermal resistance VF trr Rth(j-c) Rth(j-a) Note) 1. Rated input/output frequency: 10 MHz 2. * : trr measuring circuit Conditions VRRM = 300 V, TC = 25°C VRRM = 300 V, Tj = 150°C IF = 10 A, TC = 25°C IF = 1 A, IR = 1 A Direct current (between junction and case) Min Typ Max 20 5 1 50 1.5 40 Unit µA mA V ns °C/W °C/W 50 Ω 50 Ω trr IF D.U.T 5.5 Ω IR 0.1 × IR 1 MA3G655 IF  V F 100 107 106 Fast Recovery Diodes (FRD) IR  V R 60 PD(AV)  IF(AV) Average forward power PD(AV) (W) t0 t1 Ta = 150°C 50 Forward current IF (A) 10 Reverse current IR (nA) Ta = 150°C 25°C 100°C 105 104 103 102 100°C 40 t0 / t1 = 1/6 30 1/3 1/2 DC 1 25°C 20 0.1 10 10 0.01 0 0.4 0.8 1.2 1.6 2.0 0 50 100 150 200 250 300 350 0 0 4 8 12 16 20 24 Forward voltage VF (V) Reverse voltage VR (V) Average forward current IF(AV) (A) IF(AV)  TC 24 Rth(t)  t 102 Without heat sink Average forward current IF(AV) (A) 1/3 1/6 16 DC Thermal resistance Rth (°C/W) 20 t0 / t1 = 1/2 10 12 1 8 10−1 4 t0 t1 0 30 50 100 150 10−2 10−4 10−3 10−2 10−1 1 10 102 103 104 Case temperature TC (°C) Time t (s) 2 .


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