Document
Variable Capacitance Diodes
MA111
MA357J
Silicon epitaxial planer type
For CATV tuner
INDICATES CATHODE
Unit : mm
s Features
q q
0.4±0.15
1
2
Small series resistance rD
0.4±0.15 1.7±0.1 2.5±0.2 0.45–0.05
+0.1
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Reverse voltage (DC) Peak reverse voltage Junction temperature Storage temperature
* RL =10kΩ
Symbol VR VRM * Tj Tstg
Rating 34 35 150 – 55 to +150
Unit V V ˚C ˚C
0.9±0.1
1 : Anode 2 : Cathode S-Mini Type Package (Flat 2-pin) Marking Symbol : 7K
s Electrical Characteristics (Ta= 25˚C)
Parameter Reverse current (DC) Symbol IR CD(0V) CD(2V) Diode capacitance CD(25V) CD(10V) CD(17V) Capacitance ratio Diode capacitance deviation Series resistance C D(2V)/CD(25V) ∆C rD*1 CD (2V) (10V) (17V) (25V) CD= 9pF, f= 470MHz *2 VR= 30V VR= 0V, f= 1MHz VR= 2V, f= 1MHz VR= 25V, f= 1MHz VR= 10V, f= 1MHz VR= 17V, f= 1MHz 58.0 29.00 2.53 6.40 3.50 11.0 2.0 0.54 34.30 2.92 8.32 4.35 Condition min typ max 10 Unit nA pF pF pF pF pF — % Ω
Note 1. Rated input/output frequency : 470MHz 2. *1 : r D measurement device : YHP MODEL 4191A RF IMPEDANCE ANALYZER 3. *2 : Low Signal Level
s Marking
7K
0.16–0.06
+0.1
1.25±0.1
Large capacity variation ratio
Variable Capacitance Diodes
MA357J
IF – VF
120 25˚C
CD (pF)
CD – VR
100 f=1MHz Ta=25˚C
100
IR – Ta
VR=30V
100
50
IF (mA)
80
Ta=60˚C
–40˚C
20
Diode capacitance
Forward current
60
10
Reverse current
IR (nA)
30
10
1
40
5 3 2
0.1
20
0 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V)
1 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V)
0.01 0 20 40 60 80 100 120 140 160 Ta (˚C) Ambient temperature
CD – Ta
1.04 f=1MHz 1.03
1.02 CD (Ta) CD (Ta=25˚C)
VR=2V
1.01
17V 10V 25V
1.00
0.99
0.98 0 20 40 60 Ta 80 (˚C) 100 Ambient temperature
.