MA2ZV06

Variable Capacitance Diodes MA2ZV06 Silicon epitaxial planar type Unit : mm For VCO I Features Good linearity and large capacitance-ratio in CD  VR relation Small series resistance rD S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package INDICATES CATHODE 0.4 ± 0.15 1 2 0.4 ± 0.15 1.7 ± 0.1 2.5 ± 0.2 Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 150 −55 to +150 Unit V °C °C 0.9 ± 0.1 I Absolute Maximum Ratings Ta = 25°C 0 to 0.05 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 8C I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance* CD(1V)/CD(4V) rD VR = 4 V, f = 470 MHz VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 37.0 14.6 2.40 Conditions Min Typ Max 10 41.0 16.2 2.70 0.3 Unit nA pF pF  Ω Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.16 − 0.06 + 0.1 0.3 − 0.05 + 0.1 1.25 ± 0.1 1 MA2ZV06 CD  VR 100 50 f = 1 MHz Ta = 25°C 120 Variable Capacitance Diodes IF  V F 1.04 f = 1 MHz 25°C Ta = 60°C 80 CD  Ta VR = 1 V 100 1.03 − 40°C Diode capacitance CD (pF) Forward current IF (mA) 30 20 4V 1.02 10 60 5 3 2 40 20 1 0 4 8 12 16 20 24 28 32 36 40 0 0 0.2 0.4 0.6 0.8 1.0 1.2 CD(Ta) CD(Ta = 25°C) 1.01 1.00 0.99 0.98 0 20 40 6...