MA2ZV03

Variable Capacitance Diodes MA2ZV03 Silicon epitaxial planar type Unit : mm For VCO I Features Good linearity and large capacitance-ratio in CD  VR relation Small series resistance rD S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package INDICATES CATHODE 0.4 ± 0.15 1 2 0.4 ± 0.15 1.7 ± 0.1 2.5 ± 0.2 Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 150 −55 to +150 Unit V °C °C 0.9 ± 0.1 0 to 0.05 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 7Z I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance* CD(1V)/CD(4V) rD VR = 4 V, f = 470 MHz VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 5.20 2.10 2.1 Conditions Min Typ Max 10 5.80 2.58 2.6 0.3 Unit nA pF pF  Ω Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.16 − 0.06 I Absolute Maximum Ratings Ta = 25°C + 0.1 0.3 − 0.05 + 0.1 1.25 ± 0.1 1 MA2ZV03 IF  V F 120 Ta = 25°C Variable Capacitance Diodes CD  VR 100 f = 1 MHz Ta = 25°C 100 IR  T a VR = 5 V 100 50 Diode capacitance CD (pF) Forward current IF (mA) 30 20 80 60 10 Reverse current IR (nA) 0 2 4 6 8 10 12 14 16 18 20 10 1 40 5 3 2 0.1 20 0 0 1 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0 20 40 60 80 100 120 140 160 Forward voltage VF (V) Reverse vol...