Silicon epitaxial planar type
Variable Capacitance Diodes
MA2X339
Silicon epitaxial planar type
INDICATES CATHODE
Unit : mm
For UHF and VHF electro...
Description
Variable Capacitance Diodes
MA2X339
Silicon epitaxial planar type
INDICATES CATHODE
Unit : mm
For UHF and VHF electronic tuners I Features
Large capacitance ratio Small series resistance rD
1.6 − 0.1
+ 0.2
1
2
2.7 − 0.1 3.3 ± 0.2 *(3.8 ± 0.2)
+ 0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage* Forward current (DC) Junction temperature Storage temperature Note) * : RL = 2.2 kΩ Symbol VR VRM IF Tj Tstg Rating 32 34 20 150 −55 to +150 Unit V V mA °C °C
1.1 − 0.1
+ 0.2
5°
0.3
0 to 0.05
5°
*(
): WL type
1 : Anode 2 : Cathode Mini Type Package (2-pin)
Marking Symbol: 6N
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(2V) CD(25V) CD(10V) CD(17V) Capacitance ratio Capacitance difference Diode capacitance deviation Series resistance* CD(2V)/CD(25V) CD(10V)/CD(17V) ∆C rD CD(2V)(10V)(17V)(25V) CD = 9 pF, f = 470 MHz VR = 30 V VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 10 V, f = 1 MHz VR = 17 V, f = 1 MHz 14.220 2.132 5.307 2.909 6.22 1.70 1.96 2 0.45 Conditions Min Typ Max 10 15.473 2.321 6.128 3.411 Unit nA pF pF pF pF % Ω
Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.16 − 0.03
+ 0.1
0.55 ± 0.1
1
MA3X339
CD VR
100 f = 1 MHz Ta = 25°C 120
Variable Capacitance Diodes
IF V F
1.03
CD Ta
f = 1 MHz VR = 2 V 10 V 17 V 25 V 1.00
50
100
1.02
Diode capacitance CD (pF)
30 20
Forward cu...
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