Silicon epitaxial planar type
Variable Capacitance Diodes
MA2X329
Silicon epitaxial planar type
For VHF electronic tuners I Features
• Large capacita...
Description
Variable Capacitance Diodes
MA2X329
Silicon epitaxial planar type
For VHF electronic tuners I Features
Large capacitance ratio Small series resistance rD Mini type package, allowing downsizing of equipment and automatic insertion through the taping package
5° INDICATES CATHODE
Unit : mm
1.6 − 0.1
+ 0.2
1
2
2.7 − 0.1 3.3 ± 0.2 *(3.8 ± 0.2)
+ 0.2
0 to 0.05
Reverse voltage (DC) Peak reverse voltage Forward current (DC) Junction temperature Storage temperature
VR VRM IF Tj Tstg
32 34 20 150 −55 to +150
V V mA °C °C
5°
*(
): WL type
1 : Anode 2 : Cathode Mini Type Package (2-pin)
Marking Symbol: 6B
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(3V) CD(25V) CD(10V) CD(17V) Capacitance ratio Diode capacitance deviation Series resistance* CD(3V)/CD(25V) ∆C rD CD(3V)(10V)(17V)(25V) CD = 9 pF, f = 470 MHz VR = 30 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 10 V, f = 1 MHz VR = 17 V, f = 1 MHz 25.87 2.58 9.15 3.28 9 3 1.6 42 32.64 3.20 12.44 4.46 Conditions Min Typ Max 10 Unit nA pF pF pF pF pF % Ω
Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.16 − 0.03
+ 0.1
Parameter
Symbol
Rating
Unit
1.1 − 0.1
I Absolute Maximum Ratings Ta = 25°C
+ 0.2
0.3
0.55 ± 0.1
1
MA2X329
CD VR
100 f = 1 MHz Ta = 25°C 120
Variable Capacitance Diodes
IF V F
1.03
CD Ta
f = 1 MHz VR = 3 V 10 V 17 V 25 V
50
100
...
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