MA2X073

Band Switching Diodes MA2X073 Silicon epitaxial planar type Unit : mm For band switching I Features Low forward dynamic resistance rf Less voltage dependence of diode capacitance CD Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 1.6 − 0.1 + 0.2 INDICATES CATHODE 1 2 2.7 − 0.1 3.3 ± 0.2 *(3. 8 ± 0.2) + 0.2 5° 0 to 0.05 Reverse voltage (DC) Forward current (DC) Operating ambient temperature* VR IF Topr Tstg 35 100 −25 to +85 −55 to +150 V mA °C °C 5° *( ): WL type Storage temperature 1 : Anode 2 : Cathode Mini Type Package (2-pin) Note) * : Maximum ambient temperature during operation Marking Symbol: 4B I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Conditions Min Typ 0.01 0.92 0.9 0.65 Max 100 1 1.2 0.85 Unit nA V pF Ω Note) 1 Rated input/output frequency: 100 MHz 2. * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.16 − 0.03 + 0.1 Parameter Symbol Rating Unit 1.1 − 0.1 + 0.2 I Absolute Maximum Ratings Ta = 25°C 0.3 0.55 ± 0.1 1 MA2X073 IF  V F 103 Ta = 25°C 10 Band Switching Diodes CD  VR f = 1 MHz Ta = 25°C IR  T a 102 VR = 33 V 5 3 2 Reverse current IR (nA) 102 Diode capacitance CD (pF) Forward current IF (mA) 10 10 1 1 0.5 0.3 0.2 1 10−1 10−1 0.1 10−2 0 4 8 12 16 20 24...