MA2S728

Schottky Barrier Diodes (SBD) MA2S728 Silicon epitaxial planar type Unit : mm 0.30 ± 0.05 For switching circuits I Features Super-small SS-mini type 2-pin package Allowing high-density mounting Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) Small temperature coefficient of forward characteristic Extremely low reverse current IR 2 1 0.01 ± 0.01 0.12 − 0.02 + 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Peak forward current Forward current (DC) Junction temperature Storage temperature Symbol VR VRM IFM IF Tj Tstg Rating 30 30 150 30 125 −55 to +125 Unit V V mA mA °C °C 0 − 0.05 +0 1.20 − 0.03 + 0.05 1.60 ± 0.05 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: B I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ , CL = 10 pF 1.5 1 Conditions Min Typ Max 300 0.4 1 Unit nA V V pF ns Detection efficiency 65 0.60 − 0.03 + 0.05 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application ...