Silicon epitaxial planar type
Band Switching Diodes
MA2S077
Silicon epitaxial planar type
Unit : mm
For band switching
0.15 min. 0.15 min.
I Featur...
Description
Band Switching Diodes
MA2S077
Silicon epitaxial planar type
Unit : mm
For band switching
0.15 min. 0.15 min.
I Features
Low forward dynamic resistance rf Less voltage dependence of diode capacitance CD SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.27 − 0.02 0.8 ± 0.1
+ 0.05
1.3 ± 0.1 1.7 ± 0.1
Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature* Storage temperature
Symbol VR IF Topr Tstg
Rating 35 100 −25 to +85 −55 to +150
Unit V mA °C °C
0.7 ± 0.1
1 : Anode 2 : Cathode SS-Mini Type Package (2-pin)
Note) * : Maximum ambient temperature during operation
Marking Symbol: S
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Conditions Min Typ 0.01 0.92 0.9 0.65 Max 100 1.0 1.2 0.85 Unit nA V pF Ω
Note) 1 Rated input/output frequency: 100 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0 to 0.1
0.13 − 0.02
+ 0.05
I Absolute Maximum Ratings Ta = 25°C
0.27 − 0.02
+ 0.05
1
MA2S077
IF V F
120 Ta = 25°C 100 50 100
Band Switching Diodes
CD VR
f = 1 MHz Ta = 25°C
1 000
IR T a
VR = 33 V
Diode capacitance CD (pF)
Forward current IF (mA)
80
10 5 3 2 1 0.5 0.3 0.2 0.1
60
Reverse current IR (nA)
0 4 8 12 16 20 24 28 32 36 40
30 20
100
10
40
1
20
0
0
0.2
0.4
...
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