MA2Q705

Schottky Barrier Diodes (SBD) MA2Q705 Silicon epitaxial planar type Unit : mm For high-frequency rectification 4.4 ± 0.3 0 to 0.05 New Mini-power type package (2-pin) Allowing to rectify under (IF(AV) = 1.5 A) condition Low VF (forward voltage) type: VF < 0.37 V (at IF = 1.0 A) 2.5 ± 0.3 I Features 2 1 0.25 − 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1.5 30 −40 to +125 −40 to +125 Unit V V A A °C °C 1.2 ± 0.4 5.0 − 0.1 + 0.4 1.2 ± 0.4 1 : Anode 2 : Cathode New Mini Power Type Package (2-pin) Marking Symbol: PK Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time*1,2 Symbol IR VF Ct trr VR = 30 V IF = 1.0 A VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω 90 50 Conditions Min Typ Max 3 0.37 Unit mA V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 20 MHz 3. *1 : Obtained by fixing the element to the printed-circuit board (glass epoxy) *2 : trr measuring circuit Bias Applic...