MA2P701

Schottky Barrier Diodes (SBD) MA2P701, MA2P701A Silicon epitaxial planar type Unit : mm For high-frequency rectification 0.5 ± 0.1 1 2 5.0 ± 0.5 I Features Low forward rise voltage VF, optimum for low-voltage rectification Optimum for high-frequency rectification because of its short reverse recovery time (trr) Allowing large-current rectification in spite of its small-size because of its low thermal resistance (Rth(j-a)) 4.0 ± 0.2 1.5 ± 0.1 4.0 ± 0.5 3.0 ± 0.2 0.7 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage MA2P701 MA2P701A MA2P701 MA2P701A IFM IF(AV) IFSM Tj Tstg VRRM Symbol VR Rating 20 40 20 40 2 1 6 125 −55 to +125 A A A °C °C V Unit V 1.5 ± 0.2 1 : Anode 2 : Cathode Mini Type Power Package (2pin) Peak forward current Average forward current*1 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature Marking Symbol MA2P701 : 701 MA2P701A : 701A Note) *1 : With a printed-circuit board (copper foil area cathode side) 2 mm × 10 mm or more (copper foil area anode side) 1 mm × 10 mm or more. Board thickness t = 1.6 mm *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) MA2P701 MA2P701A Forward voltage (DC) Terminal capacitance Reverse recovery time*2 High voltage rectification*1 VF Ct trr Rth(j-a) Symbol IR VR = 20 V VR = 40 V IF = 1.0 A VR = 0 V, f = 1 MHz IF = IR = 100 mA...