MA2HD08

Schottky Barrier Diodes (SBD) MA2HD08 Silicon epitaxial planar type Unit : mm For high-frequency rectification 3.2 ± 0.3 0 to 0.05 Small and thin Half New Mini-power package Allowing to rectify under (IF(AV) = 1 A) condition 1.9 ± 0.3 2 1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1 25 125 −40 to +125 Unit V 0.9 ± 0.4 0.9 ± 0.4 3.8 ± 0.2 0.25 − 0.05 1.85 ± 0.3 + 0.1 V A A °C °C 1 : Anode 2 : Cathode Half New Mini-Power Type Package Marking Symbol: PP Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 1 A VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω 50 15 Conditions Min Typ Max 13 0.30 Unit mA V pF ns Note) 1. Rated input/output frequency: 20 MHz 2. * : trr measuring instrument Bias Application Unit N-50BU tr Input Pulse tp 10% t IF Output Pulse trr t Irr = 0.1 · IR IF = 100 mA IR = 100 mA RL = 100 Ω A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 1.0 ± 0.2 I Features 1 MA2HD08 IF  V F 10 1 Ta = 125°C 1 Schottky Barrier Diodes (SBD) IR  V R 10−1 Forward ...