MA2HD07

Schottky Barrier Diodes (SBD) MA2HD07 Silicon epitaxial planar type Unit: mm 1.9±0.1 2 1.85±0.2 0.9±0.2 0.9±0.2 8° For high frequency rectification I Features IF(AV) = 1 A rectification is possible Half New Mini-power package 3.2±0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Average forward current Non-repetitive peak forwardsurge-current * Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1 25 125 −40 to +125 Unit V V A A °C °C 8° 1 0.25+0.1 –0.05 0 to 0.05 1.0±0.2 1 : Anode 2 : Cathode HNMiniP2-J1 Package Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) Marking Symbol: PQ I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time * Symbol IR VF Ct trr VR = 30 V IF = 1 A VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 50 15 Conditions Min Typ Max 7 0.37 Unit mA V pF ns Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 20 MHz 3. *: trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = ...