MA2C858

Band Switching Diodes MA2C858 Silicon epitaxial planar type Unit : mm For band switching φ 0.45 max. Extra-small DHD envelope, allowing to insert into a 5 mm pitch hole. Less voltage dependence of the terminal capacitance Ct Low forward dynamic resistance rf Optimum for a band switching of a tuner 0.2 max. I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature Storage temperature Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +100 Unit V mA °C °C 2 φ 1.75 max. 1 : Cathode 2 : Anode JEDEC : DO-34 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC)* Symbol IR VF Ct rf VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Conditions Min Typ Max 100 1 1.2 0.9 Unit nA V pF Ω Forward voltage (DC) Terminal capacitance Forward dynamic resistance Note) 1 Rated input/output frequency: 100 MHz 2 * : Measurement in light shielded condition I Cathode Indication Type No. Color 1st Band 2nd Band MA2C858 Yellow Yellow 13 min. 2.2 ± 0.3 1st Band 2nd Band 0.2 max. 13 min. I Features COLORED BAND INDICATES CATHODE 1 1 MA2C858 IF  V F 102 102 Band Switching Diodes IR  V R 102 IR  T a 10 Ta = 85°C 10 Forward current IF (mA) Reverse current IR (nA) 10 Reverse current IR (nA) 1 1 VR = 25 V 10 V 1 10−1 10−1 10−1 10−2 Ta = 85°C 25°C 0 0.2 0.4 0.6 − 25°C 0.8 1.0 25°C 10−2 10−2 10−3 10−3 0 10 20 30 40 50 0 40 80 120 160 Forward voltage VF (V) ...