Silicon epitaxial planar type
Switching Diodes
MA2C196
Silicon epitaxial planar type
Unit : mm
For switching circuits I Features
• Low forward dynam...
Description
Switching Diodes
MA2C196
Silicon epitaxial planar type
Unit : mm
For switching circuits I Features
Low forward dynamic resistance rf Small terminal capacitance, Ct
COLORED BAND INDICATES CATHODE
φ 0.45 max. 1
I Absolute Maximum Ratings Ta = 25°C
Parameter Forward voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = l s Symbol VR VRRM IF(AV) IFRM IFSM Tj Tstg Rating 50 50 100 225 500 200 −55 to +200 Unit V V mA mA mA °C °C
0.2 max.
2 φ 1.75 max.
1 : Cathode 2 : Anode JEDEC : DO-34
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Symbol IR1 IR2 IR3 Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Forward dynamic resistance VF VR Ct rf1 rf2 Reverse recovery time* trr VR = 15 V VR = 50 V VR = 50 V, Ta = 150°C IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 3 mA, f = 30 MHz IF = 3 mA, f = 30 MHz IF = 10 mA, VR = 1 V Irr = 0.1 · IR, RL = 100 Ω 50 4 2.5 3.6 0.2 Conditions Min Typ Max 5 10 100 1.2 Unit nA nA µA V V pF Ω Ω ms
Note) 1. Rated input/output frequency: 2.5 kHz 2. * : trr measuring circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 1 V RL = 100 Ω Output Pulse
A
I Cathode Indication
Type No. Color 1st Band 2nd Band MA2C196 Green Green
Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω
VR
90% tp = 2 µs tr = 0.35 n...
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