Document
Switching Diodes
MA2B190
Silicon epitaxial planar type
φ 0.56 max.
Unit : mm
For switching circuits
1
I Features
• Low forward dynamic resistance rf • Small terminal capacitance, Ct
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR VRRM IF(AV) IFRM IFSM Tj Tstg Rating 35 35 100 225 500 200 −55 to +200 Unit V V mA mA mA °C °C
1st Band 2nd Band
2 φ 1.95 max.
1: Cathode 2: Anode JEDEC: DO-35
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Symbol IR1 IR2 IR3 Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Forward dynamic resistance Reverse recovery time*3 VF VR Ct rf*1 rf*2 trr VR = 15 V VR = 30 V VR = 35 V, Ta = 150°C IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 3 mA, f = 30 MHZ IF = 3 mA, f = 30 MHZ IF = 10 mA, VR = 1 V Irr = 0.1 · IR, RL = 100 Ω 35 4 2.5 3.6 0.2 Conditions Min Typ Max 0.005 0.01 100 1.2 Unit µA µA µA V V pF Ω Ω ms
Note) 1. Rated input/output frequency: 2.5 MHz 2. *1 : rf measuring instrument: Nihon Koshuha Model TDC-121A *2 : rf measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER *3 : trr measuring circuit
Bias Application Unit N-50BU Input Pulse tr 10% tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 1 V RL = 100 Ω Output Pulse
I Cathode Indication
Type No. Color 1st Band 2nd Band MA2B190 White White
A
VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
24 min.
4.5 max.
24 min.
COLORED BAND INDICATES CATHODE
1
MA2B190
IF V F
103
Switching Diodes
VF Ta
1.0
103
IR V R
102
Forward current IF (mA)
0.8
102
Ta = 150°C
Forward voltage VF (V)
10
0.6
3 mA
Reverse current IR (nA)
IF = 10 mA
10
100°C
1
Ta = 150°C 100°C 25°C − 20°C
1 mA 0.4 0.1 mA 0.2
1
10−1
10−1
25°C
10−2
0
0.2
0.4
0.6
0.8
1.0
1.2
0 −40
10−2
0
40
80
120
160
0
10
20
30
40
50
Forward voltage VF (V)
Ambient temperature Ta (°C)
Reverse voltage VR (V)
Ct VR
6 100
r f IF
Forward dynamic resistance rf (Ω)
f = 1 MHz Ta = 25°C f = 30 MHz
Terminal capacitance Ct (pF)
5
10
4
3
1
2
0.1
1
0
0
10
20
30
40
50
60
0.01 0.1
0.3
1
3
10
30
100
Reverse voltage VR (V)
Forward current IF (mA)
2
.