DatasheetsPDF.com

MA2B190 Dataheets PDF



Part Number MA2B190
Manufacturers Panasonic
Logo Panasonic
Description Silicon epitaxial planar type
Datasheet MA2B190 DatasheetMA2B190 Datasheet (PDF)

Switching Diodes MA2B190 Silicon epitaxial planar type φ 0.56 max. Unit : mm For switching circuits 1 I Features • Low forward dynamic resistance rf • Small terminal capacitance, Ct I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR VRRM IF(AV) IFRM IFSM Tj Tstg Rating 35 35 10.

  MA2B190   MA2B190


Document
Switching Diodes MA2B190 Silicon epitaxial planar type φ 0.56 max. Unit : mm For switching circuits 1 I Features • Low forward dynamic resistance rf • Small terminal capacitance, Ct I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR VRRM IF(AV) IFRM IFSM Tj Tstg Rating 35 35 100 225 500 200 −55 to +200 Unit V V mA mA mA °C °C 1st Band 2nd Band 2 φ 1.95 max. 1: Cathode 2: Anode JEDEC: DO-35 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol IR1 IR2 IR3 Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Forward dynamic resistance Reverse recovery time*3 VF VR Ct rf*1 rf*2 trr VR = 15 V VR = 30 V VR = 35 V, Ta = 150°C IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 3 mA, f = 30 MHZ IF = 3 mA, f = 30 MHZ IF = 10 mA, VR = 1 V Irr = 0.1 · IR, RL = 100 Ω 35 4 2.5 3.6 0.2 Conditions Min Typ Max 0.005 0.01 100 1.2 Unit µA µA µA V V pF Ω Ω ms Note) 1. Rated input/output frequency: 2.5 MHz 2. *1 : rf measuring instrument: Nihon Koshuha Model TDC-121A *2 : rf measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER *3 : trr measuring circuit Bias Application Unit N-50BU Input Pulse tr 10% tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 1 V RL = 100 Ω Output Pulse I Cathode Indication Type No. Color 1st Band 2nd Band MA2B190 White White A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 24 min. 4.5 max. 24 min. COLORED BAND INDICATES CATHODE 1 MA2B190 IF  V F 103 Switching Diodes VF  Ta 1.0 103 IR  V R 102 Forward current IF (mA) 0.8 102 Ta = 150°C Forward voltage VF (V) 10 0.6 3 mA Reverse current IR (nA) IF = 10 mA 10 100°C 1 Ta = 150°C 100°C 25°C − 20°C 1 mA 0.4 0.1 mA 0.2 1 10−1 10−1 25°C 10−2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 −40 10−2 0 40 80 120 160 0 10 20 30 40 50 Forward voltage VF (V) Ambient temperature Ta (°C) Reverse voltage VR (V) Ct  VR 6 100 r f  IF Forward dynamic resistance rf (Ω) f = 1 MHz Ta = 25°C f = 30 MHz Terminal capacitance Ct (pF) 5 10 4 3 1 2 0.1 1 0 0 10 20 30 40 50 60 0.01 0.1 0.3 1 3 10 30 100 Reverse voltage VR (V) Forward current IF (mA) 2 .


MA2B182 MA2B190 MA2B27QA


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)