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MPS2222A

General Semiconductor

SMALL SIGNAL TRANSISTORS

ADVANCED INFORMATION MPS2222A SMALL SIGNAL TRANSISTORS (NPN) TO-92 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6...


General Semiconductor

MPS2222A

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Description
ADVANCED INFORMATION MPS2222A SMALL SIGNAL TRANSISTORS (NPN) TO-92 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) FEATURES ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ On special request, this transistor is also manufactured in the pin configuration TO-18. ¨ This transistor is also available in the SOT-23 case with the type designation MMBT2222A max. Æ 0.022 (0.55) 0.098 (2.5) E C MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18g B Dimensions in inches and (millimeters) MAXIMUM RATINGS AND THERMAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Power Dissipation at TA=25°C Derate above 25°C Power Dissipation at TC=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Air Thermal Resistance Junction to Case Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot 75 40 6.0 600 625 5.0 1.5 12 200 83.3 150 Ð55 to +150 Volts Volts Volts mA mW mW/°C W mW/°C °C/W ¡C/W ¡C ¡C Ptot RQJA RQJC Tj TS 2/22/99 MPS2222A ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at IC = 10 mA, IE = 0 Collector-Emitter Breakdown Voltage(1) at IC = 10 mA, IB = 0 Emitter-Base Breakdown Voltage at IE = 10 mA, IC = 0 Collector-Emitter Saturation Voltage(1) at IC ...




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