M5M51016BRT-10L-I

99 Jul Jul ,1997 ,1997 MITSUBISHI MITSUBISHI LSIs LSIs M5M51016BTP,RT-70L,-10L-I, M5M51016BTP,RT-70L,-10L-I, -70LL,-10LL-I -70LL,-10LL-I 1048576-BIT(65536-WORD 1048576-BIT(65536-WORDBY BY16-BIT)CMOS 16-BIT)CMOSSTATIC STATICRAM RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low stand-by current and low operation current and ideal for the battery back-up application. The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board. PIN CONFIGURATION (TOP VIEW) NC A12 A7 A6 A5 A4 A3 A2 A1 A0 CHIP SELECT INPUT CS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 NC BC1 BC2 A14 A15 BYTE CONTROL INPUTS ADDRESS INPUTS ADDRESS INPUTS FEATURES Power supply current Type name M5M51016BTP,RT-70L M5M51016BTP,RT-10L M5M51016BTP,RT-70LL M5M51016BTP,RT-10LL Access time (max) Active (max) stand-by (max) 200µA (VCC = 5.5V) 70ns 100ns 30mA (1MHz) 70ns 100ns 40µA (VCC = 5.5V) 0.3...