M5M4V4S40CTP-15

SDRAM (Rev. 0.3) MITSUBISHI LSIs Feb ‘97 Preliminary M5M4V4S40CTP-12, -15 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM PRELIMINARY Some of contents are described for general products and are subject to change without notice. DESCRIPTION The M5M4V4S40CTP is a 2-bank x 131,072-word x 16-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V4S40CTP achieves very high speed data rates up to 83MHz, and is suitable for main memory or graphic memory in computer systems. Vdd DQ0 DQ1 VssQ DQ2 DQ3 VddQ DQ4 DQ5 VssQ DQ6 DQ7 VddQ DQML /WE /CAS /RAS /CS BA A8 A0 A1 A2 A3 Vdd PIN CONFIGURATION (TOP VIEW) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 Vss DQ15 DQ14 VssQ DQ13 DQ12 VddQ DQ11 DQ10 VssQ DQ9 DQ8 VddQ NC DQMU CLK CKE NC NC NC A7 A6 A5 A4 Vss FEATURES - Single 3.3v±0.3v power supply - Clock frequency 83MHz / 67MHz - Fully synchronous operation referenced to clock rising edge - Dual bank operation controlled by BA(Bank Address) - /CAS latency- 1/2/3 (programmable) - Burst length- 1/2/4/8/FP (programmable) - Sequential and interleave burst (programmable) - Byte control by DQMU and DQML - Random column access - Auto precharge / All bank precharge controlled by A8 - Auto and self refresh - 1024 refresh cycles /16.4ms CLK - LVTTL Interface CKE - 400-mil, 50-pin Thin Small Outline Package /CS (TSOP II) with 0.8mm lea...