M29W022BT

M29W022BT M29W022BB 2 Mbit (256Kb x8, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs by Byte typical 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 4 Main Blocks s s s s PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits TSOP32 (NZ) 8 x 14mm PLCC32 (K) s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M29W022BT: C4h – Bottom Device Code M29W022BB: C3h Figure 1. Logic Diagram s VCC s 18 A0-A17 8 DQ0-DQ7 s s W E G M29W022BT M29W022BB VSS AI02971 March 2000 1/20 M29W022BT, M29W022BB Figure 2. TSOP Connections Figure 3. PLCC Connections A11 A9 A8 A13 A14 A17 W VCC NC A16 A15 A12 A7 A6 A5 A4 1 32 8 9 M29W022BT 25 M29W022BB 24 16 17 AI02970 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 AI03045 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A12 A15 A16 NC VCC W A17 1 32 A14 A13 A8 A9 A11 G A10 E DQ7 9 M29W022BT M29W022BB 25 17 Table 1. Signal Names A0-A17 DQ0-DQ7 E G W VCC VSS ...