M29F400BB

M29F400BT M29F400BB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory Features ■ Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical ■ 11 memory blocks – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks ■ Program/erase controller – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin ■ Erase Suspend and Resume modes – Read and Program another Block during Erase Suspend ■ Unlock Bypass Program command – Faster Production/Batch Programming ■ Temporary block unprotection mode ■ Low power consumption – Standby and Automatic Standby ■ 100,000 program/erase cycles per block ■ 20-year data retention – Defectivity below 1 ppm/year TSOP48 (N) 12 x 20mm 44 1 SO44 (M) ■ Electronic signature – Manufacturer Code: 0020h – Top D...