16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Single Supply Flash Memory
M29F160BT M29F160BB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
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SINGLE 5V±10%...
Description
M29F160BT M29F160BB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 8µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks
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PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin
TSOP48 (N) 12 x 20mm
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ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend
Figure 1. Logic Diagram
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UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29F160BT: 22CCh – Bottom Device Code M29F160BB: 224Bh
A0-A19 W E G RP
VCC
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20
15 DQ0-DQ14 DQ15A–1 M29F160BT M29F160BB BYTE RB
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VSS
AI02920
March 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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M29F160BT, M29F160BB
Figure 2. TSOP Connections
A15 A14 A13 A12 A11 A10 A9 A8 A19 NC W RP NC NC RB A18 A17 A7 A6 A5 A4 A3 A2 A1 1 48 A16 BYTE VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1...
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