MC-4R256FKE8S

DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE8S Direct Rambus DRAM SO-RIMMTM Module 256M-BYTE (128M-WORD x 18-BIT) Description The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking systems, and other applications where high bandwidth and low latency are required. MC-4R256FKE8S modules consists of eight 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588). These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 800MHz transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per 16 bytes). The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed memory transactions. The separate control and data buses with independent row and column control yield high bus efficiency. The Direct RDRAM's multi-bank architecture supports up to four simultaneous transactions per device. Features 160 edge connector pads with 0.65mm pad spacing 256 MB Direct RDRAM storage Each RDRAM has 32 banks, for 256 banks total on module Gold plated contacts RDRAMs use Chip Scale Package (CSP) Serial Presence Detect support Operates from a 2.5 V supply Powerdown self refresh m...