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MC-45V8AB641

NEC

8M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE

DATA SHEET MOS INTEGRATED CIRCUIT MC-45V8AB641 VirtualChannel TM 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNB...


NEC

MC-45V8AB641

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Description
DATA SHEET MOS INTEGRATED CIRCUIT MC-45V8AB641 VirtualChannel TM 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-45V8AB641 is a 8,388,608 words by 64 bits VirtualChannel synchronous dynamic RAM module on which 4 pieces of 128M VirtualChannel SDRAM : µPD45125161 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction. Features 8,388,608 words by 64 bits organization Clock frequency and access time from CLK Part number Read Clock Access time Prefetch Maximum supply current mA Operating Restore Channel read / write (Burst) 600 520 300 300 920 880 8 Refresh Auto Self latency frequency MHz (MAX.) from CLK ns (MAX.) MC-45V8AB641KFA-A75 MC-45V8AB641KFA-A10 2 133 100 5.4 6 Fully Standard Synchronous Dynamic RAM, with all signals referenced to a positive clock edge Dual internal banks controlled by BA0 (Bank Select) Programmable wrap sequence (sequential / interleave) Programmable burst length (1, 2, 4, 8 and 16) Read latency (2) Prefetch read latency (4) Auto precharge and without auto precharge Auto refresh and self refresh Single 3.3 V ± 0.3 V power supply Interface: LVTTL Refresh cycle: 4K cycles/64 ms 168-pin dual in-line memory module (Pin pitch = 1.27 mm) Unbuffered type Serial PD The information...




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